Method for fabricating semiconductor device
US7557004B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2006 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Dec 27, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0181
Abstract
The method for fabricating the semiconductor device includes the steps of: forming an insulating film 20, a conductive film 22 and an insulating film 24 over a semiconductor substrate 10 having a first to a third region; removing an insulating film 24, the conductive film 22 and an insulating film 20 formed in the second region and the third region; forming an insulating film 38 in the second region and the third region; removing the insulating film 24 in the first region and the insulating film 38 in the third region; forming an insulating film 44 in the third region; after a conductive film 52 has been formed, patterning the conductive films 22, 52 in the first region to form a gate electrode 58; and patterning the conductive film 52 to form gate electrodes 62 in the second region and the third region while removing the conductive film 52 over the gate electrode 58.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.