Method of manufacturing polysilicon thin film and method of manufacturing thin film transistor having the same
US7557050B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2005 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Oct 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method of manufacturing a polysilicon thin film and a method of manufacturing a TFT having the thin film, a laser beam is irradiated on a portion of an amorphous silicon thin film to liquefy the portion of the amorphous silicon thin film. The amorphous silicon thin film is on a first end portion of a substrate. The liquefied silicon is crystallized to form silicon grains. The laser beam is shifted from the first end portion towards a second end portion of the substrate opposite the first end portion by an interval in a first direction. The laser beam is then irradiated onto a portion of the amorphous silicon thin film adjacent to the silicon grains to form a first polysilicon thin film. Therefore, electrical characteristics of the amorphous silicon thin film may be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.