Semiconductor photodetector
US7557368B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2003 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jan 19, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/146
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A semiconductor photodetector (1) for detecting short duration laser light pulses of predetermined wavelength in a light signal (2) comprises a micro-resonator (3) of vertical Fabry-Perot construction having a Bragg mirror pair, namely, a front mirror (5) and a rear mirror (6) with an active region (8) located between the front and rear mirrors (5,6). An N-type substrate (11) supports the rear mirror (6). The light signal (2) is directed into the active region (8) through the front mirror (5) while a pump beam (17) is directed into the active region (8) at an end (18) thereof. The spacing between the front and rear mirrors (5,6) is such as to cause light of the predetermined wavelength to resonate between the mirrors (5,6). The semiconductor material of the active region (8) is selected so that one photon from each of the light signal (2) and the pump beam (17) are required to transfer one electron from a valence band (21) of the active region (8) across a bandgap (22) to a conduction band (20) so that the active region operates on the principle of Two-Photon Absorption. On the active region (8) being simultaneously subjected to the pump beam and light of the predetermined waveleng…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.