Reverse conducting IGBT with vertical carrier lifetime adjustment

US7557386B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Holger Ruething · Munich, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Franz-Josef Niedernostheide · Hagen am Teutoburger Wald, DE
• Frank Hille · Munich, DE

Key dates

• Filing date: Mar 30, 2006
• Grant date: Jul 7, 2009
• Expiry date: Jul 1, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/151

Abstract

A reverse conducting insulated gate bipolar transistor (IGBT) includes a semiconductor substrate having a front side and a back side and a first conductivity region between the front and back sides. The first conductivity region includes a reduced lifetime zone, a first lifetime zone between the reduced lifetime zone and the front side, and an intermediate lifetime zone between the reduced lifetime zone and the back side. Charge carriers in the first lifetime zone have a first carrier lifetime, charge carriers in the reduced lifetime zone have a reduced carrier lifetime shorter than the first carrier lifetime, and charge carriers in the intermediate lifetime zone have an intermediate carrier lifetime shorter than the first carrier lifetime and longer than the reduced carrier lifetime.