Solid image capturing element for power saving at output section and manufacturing method for the same
US7557390B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 17, 2003 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jun 20, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/912
Abstract
A solid image capturing element comprising a plurality of vertical shift registers arranged to each correspond to a column of a plurality of light receiving pixels in a matrix arrangement, a horizontal shift register provided on an output side of the plurality of vertical shift registers, and an output section provided on an output side of the horizontal shift register. In this solid image capturing element, a reverse conductive semiconductor region is formed over one major surface of one conductive semiconductor substrate, the plurality of light receiving pixels, the plurality of vertical shift registers, the horizontal shift register, and the output section are formed in the semiconductor region, and a portion of the semiconductor region where the output section is formed has a higher dopant concentration than the portion of the semiconductor region where the horizontal shift register is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.