Field effect transistor and making method
US7557392B2 · kind B2 · utility
0Cited by
9References
14Claims
0Family size
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Key dates
| Filing date | Aug 9, 2005 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Jun 16, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/113
Abstract
In a thin-layer chemical transistor having a metal/solid electrolyte/semiconductor structure, the materials of which the solid electrolyte and semiconductor layers are made comprise organic solvent-soluble compounds. The transistor can be fabricated solely by solvent processes, typically printing techniques including ink jet printing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.