Transistor and CVD apparatus used to deposit gate insulating film thereof

US7557416B2 · kind B2 · utility

Assignee

• SHARP KABUSHIKI KAISHA · JP

Inventors

• Toshihide Tsubata · Tsu, JP
• Toshinori Sugihara · Rifu, JP

Key dates

• Filing date: Dec 3, 2004
• Grant date: Jul 7, 2009
• Expiry date: Dec 3, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6743

Abstract

In a transistor adapted to suppress characteristic degradation resulting from fluorine contained in a deposited film, the concentration of fluorine contained in a gate insulating film (3) is reduced to 1.0×1020 atoms/cm3 or less. As a result, the transistor can provide excellent reliability even when it is continuously driven for a long period of time at a relatively high temperature.