Solid-state image sensor including common transistors between pixels
US7557846B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 25, 2004 |
| Grant date | Jul 7, 2009 |
| Priority date | — |
| Expiry date | Sep 28, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/813
Abstract
In the solid-state image sensor including 4-Tr-pixels, a source follower transistor SF-Tr, a rest transistor RST and a select transistor Select are made common between pixels Pn, Pn+1 adjacent in the column direction, and a transfer transistor TG1 and a transfer transistor TG2 are formed in region which respectively positioned on the same side with respect to the photodiode PD1 and the photodiode PD2, and the source follower transistor SF-Tr, the reset transistor RST and the select transistor Select made common are formed in regions positioned on the side in the row direction with respect to the photodiode PD1 and the photodiode PD2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.