Thin film transistor panel and manufacturing method thereof
US7560316B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Oct 23, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136227
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thin film transistor array panel includes interconnection members interposed between the underlying gate pads made of an Al-containing metal and the overlying contact assistants made of a transparent conductor such as ITO thereon to prevent corrosion of Al due to ITO, or gate-layer signal transmission lines. Gate-layer signal transmission lines are directly connected to the data-layer signal transmission line to prevent corrosion of Al due to ITO in the thin film transistor array panel according to an embodiment of the present invention. The color filters are formed on the thin film transistor array panel to prevent misalignment between the two display panels so as to increase the aperture ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.