Crystallization method, thin film transistor manufacturing method, thin film transistor, display, and semiconductor device
US7560321B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Mar 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.