Semiconductor device having a pair of fins and method of manufacturing the same
US7560344B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Oct 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
Example embodiments relate to a semiconductor device and a method of manufacturing the same. A semiconductor device according to example embodiments may have reduced disturbances during reading operations and a reduced short channel effect. The semiconductor device may include a semiconductor substrate having a body and a pair of fins protruding from the body. Inner spacer insulating layers may be formed on an upper portion of an inner sidewall of the pair of fins so as to reduce the entrance to the region between the pair of fins. A gate electrode may cover a portion of the external sidewalls of the pair of fins and may extend across the inner spacer insulating layers so as to define a void between the pair of fins. Gate insulating layers may be interposed between the gate electrode and the pair of fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.