Semiconductor device and method of manufacturing the same
US7560346B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Oct 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
Abstract
A semiconductor device includes: a first FET that is formed with first unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the first unit FETs being connected in parallel; and a second FET that is formed with second unit FETs each having a first finger electrode and a second finger electrode provided on either side of a gate finger electrode, the second unit FETs being connected in parallel. In this semiconductor device, the second finger electrode of each of the first unit FETs and the first finger electrode of each corresponding one of the second unit FETs form a common finger electrode, and the first finger electrodes of the first unit FETs, the second finger electrodes of the second unit FETs, and the common finger electrodes are arranged in the gate length direction of the first FET and the second FET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.