Method of semiconductor thin film crystallization and semiconductor device fabrication
US7560365B2 · kind B2 · utility
1Cited by
1References
15Claims
0Family size
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Key dates
| Filing date | Sep 14, 2005 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | May 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/674
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device includes providing a substrate, forming an amorphous silicon layer over the substrate, forming a heat retaining layer on the amorphous silicon layer, patterning the heat retaining layer, and irradiating the patterned heat retaining layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.