Image sensor and manufacturing method thereof
US7560681B2 · kind B2 · utility
4Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 4, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/337
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An image sensor may include a plurality of photodiodes for performing a photo-electric conversion and a plurality of microlenses. Each of the microlenses is formed over one of the photodiodes. The image sensor may further include a vertical light generating portion formed over the microlenses and configured to refract each of plurality of incident light rays such that the light rays are vertically incident on the microlenses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.