Method of TEM sample preparation for electron holography for semiconductor devices
US7560692B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Aug 28, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N1/2806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A high quality electron microscopy sample suitable for electron holography is prepared by forming markers filled with TEOS oxide and by repeatedly applying multiple coats of an adhesive followed by a relatively low temperature cure after each application. The TEOS oxide marker is readily visible during the polish, has a similar polish rate as a semiconductor material, and reduces contamination during sample preparation. The repeated application of adhesives separated by relatively low temperature cures increases the adhesive strength of the adhesive material to the semiconductor material without making it too brittle. This results in an improved control and yield of the sample preparation process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.