Ion implanter with etch prevention member(s)
US7560712B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Sep 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32412
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method of doping ions into a substrate are disclosed and include a process chamber having an inner space in which an ion implantation process is performed, a support unit positioned in the process chamber, supporting a substrate and being electrically connected to a first power source for generating a high frequency pulse, a conductive unit separated from the support unit in such a manner that plasma associated with the ion implantation process is generated between the support unit and the conductive unit, wherein the conductive unit comprises a first etch prevention member preventing the conductive unit from being etched by a source gas used to generate the plasma, and a power port electrically connected to a second power source and generating radio frequency (RF) power applied to the conductive unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.