Vertical organic transistor and method of fabricating the same
US7560728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jul 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/491
Abstract
A vertical organic transistor is disclosed, which includes at least: a collector contact layer disposed on a substrate; a first organic semiconductor layer disposed on the collector contact layer; a base contact layer disposed on the first organic semiconductor layer, wherein the base contact layer comprises no less than two layers of hetero-metal layers or hetero-conductive organic layers; a second organic semiconductor layer disposed on the base contact layer; and an emitter contact layer disposed on the second organic semiconductor layer. Device properties such as output current and Ion/Ioff rate can be improved by using the vertical organic transistor of this invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.