Semiconductor light emitting element and fabrication method thereof
US7560737B2 · kind B2 · utility
5Cited by
9References
9Claims
0Family size
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Key dates
| Filing date | Sep 20, 2005 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Nov 8, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
In a semiconductor light emitting element, multiple bosses having a cylindrical shape and dispersed like islands, and recesses are formed on the upper surface of a window layer. A contact electrode is formed on the upper surface of the bosses. A transparent dielectric film is formed in the recesses. A transparent conductor film is formed on the transparent dielectric film and the contact electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.