Light emitting diodes and display apparatuses using the same
US7560746B2 · kind B2 · utility
0Cited by
2References
21Claims
0Family size
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Key dates
| Filing date | Feb 28, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jan 10, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.