Semiconductor device, electronic apparatus, method of manufacturing semiconductor device, and method of manufacturing electronic apparatus
US7560776B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/1135
Abstract
A semiconductor device includes first and second electrodes disposed apart from each other on a substrate, a gate electrode disposed so as to face the first and second electrodes and to cover at least part of each of the first and second electrodes, a semiconductor layer disposed between the first and second electrodes and the gate electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, the gate insulating layer having a film thickness that is greater in portions located directly above areas where the first and second electrodes are under the gate electrode than in a portion located directly above an area between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.