Semiconductor device with a capacitor
US7560795B2 · kind B2 · utility
2Cited by
0References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Feb 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to a semiconductor having a capacitor and a method of fabricating the same, that may be capable of simplifying a manufacturing process and increasing a capacitance of a capacitor. In embodiments, a method of forming a capacitor may use a dual damascene process and may be simplified by simultaneously forming a contact plug for applying a bias voltage to a bottom electrode and a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.