Thin film piezoelectric resonator, method of manufacturing the same, and filter including the same
US7560853B2 · kind B2 · utility
2Cited by
3References
14Claims
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Key dates
| Filing date | Feb 16, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Jun 1, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/023
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A thin film piezoelectric resonator includes: a substrate having a cavity; a first dielectric layer provided on the substrate to cover the cavity; a second dielectric layer provided on the substrate and disposed in a peripheral region of the cavity, and having a thickness larger than the first dielectric layer; a first electrode provided on the first dielectric layer and above the cavity; a piezoelectric layer provided on the first electrode and disposed to extend to a region on the second dielectric layer; and a second electrode provided on the piezoelectric layer and above the first electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.