Piezoelectric thin film resonators
US7561010B2 · kind B2 · utility
14Cited by
8References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 18, 2006 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Aug 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/178
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A piezoelectric thin film resonator is formed on a base substrate such as made of Si in which the resonance frequency is substantially determined by the lateral size not by the thickness of the resonator, whereby a resonator for use in TCXO, etc. is provided by the thin film technique, which enables to reduce the thickness of the film and the size of the resonator and integration with Si-based IC incorporating the resonator in one identical substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.