Nickel substrate thin film capacitor and method of manufacturing nickel substrate thin film capacitor
US7561406B2 · kind B2 · utility
5Cited by
1References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 29, 2007 |
| Grant date | Jul 14, 2009 |
| Priority date | — |
| Expiry date | Mar 29, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/435
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor with high capacity and low leak current is provided. The thin film capacitor includes a nickel substrate with nickel (Ni) purity of 99.99 weight percent or above, and a dielectric layer and an electrode layer disposed in this order on the nickel substrate. The thin film capacitor is typically manufactured as follows. A precursor dielectric layer is formed on a nickel substrate with nickel purity of 99.99 weight percent or above, and is subjected to annealing to form a dielectric layer. The diffusion of impurities from the nickel substrate to the precursor dielectric layer during annealing is suppressed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.