Method and apparatus for forming polycrystalline layer using laser crystallization
US7563732B2 · kind B2 · utility
1Cited by
1References
12Claims
0Family size
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Key dates
| Filing date | Nov 12, 2004 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Jun 7, 2025 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and an apparatus for forming a polycrystalline layer using laser annealing for preventing damage to the peripheral region of the substrate during laser annealing. The laser annealing comprises a shadow mask structure. When crystallizing an amorphous layer by laser annealing, the shadow mask structure shields the peripheral region of the amorphous layer from laser irradiation. A method for forming a polycrystalline layer using the laser annealing apparatus is also provided in the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.