Composition for removing photoresist residue and polymer residue
US7563754B2 · kind B2 · utility
6Cited by
2References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 28, 2005 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | Jan 2, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A composition for removing a photoresist residue and a polymer residue remaining on a semiconductor substrate after dry etching and after ashing is provided, the composition containing at least one type of fluorine compound, at least one type of organic acid, at least one type of organic amine, and water, the composition having a pH of 4 to 7, and the total content of components other than water being 0.3 to 30 mass % of the entire composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.