Semiconductor device and manufacturing method therefor
US7564076B2 · kind B2 · utility
0Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 2008 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | May 6, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode includes a first n-cladding layer disposed on and lattice-matched to an n-semiconductor substrate, wherein the first n-cladding layer is n-AlGaInP or n-GaInP; a second n-cladding layer of n-AlGaAs supported by the first n-cladding layer; and an inserted layer disposed between the first n-cladding layer and the second n-cladding layer, wherein the inserted layer includes the same elements as the first n-cladding layer, the inserted layer has the same composition ratios of Al and Ga (and P) as the first n-cladding layer, and the inserted layer contains a lower composition ratio of In than the first n-cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.