Semiconductor integrated circuit apparatus and electronic apparatus
US7564296B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 13, 2006 |
| Grant date | Jul 21, 2009 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/00384
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Semiconductor integrated circuit apparatus and electronic apparatus having a leakage current detection circuit where arbitrarily set leakage current detection ratio does not depend on power supply voltage, temperature, or manufacturing variations, and where leakage current detection is straightforward. Semiconductor integrated circuit apparatus extracts a stable potential from the center of two NchMIS transistors, amplifies drain current of an NchMOS transistor taking this potential as a gate potential to a current value of an arbitrary ratio using current mirror circuit, makes this current value flow through NchMOS transistor with the gate and drain connected, and applies drain potential of this NchMOS transistor to the gate of leakage current detection NchMOS transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.