Patent · US Active

Ridge-stripe semiconductor laser

US7564884B1 · kind B1 · utility

9Cited by
1References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2006
Grant dateJul 21, 2009
Priority date
Expiry dateSep 21, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A laminated composite includes: a 1st-conductive-type cladding layer laid on a substrate; an active layer laid on the 1st-conductive-type cladding layer; and a ridge-stripe 2nd-conductive-type cladding layer laid on the active layer. A pair of films is disposed at the end faces of the laminated composite so as to oppose each other along the lamination direction. The paired films are formed to have different spectral reflectances from each other. The resonator structure is formed with the laminated composite and the paired films. When, in the length direction of the resonator, a side with one of the paired films which has a smaller spectral reflectance is the forward side and a side with the other film having a larger spectral reflectance is the backward side, the laminated composite is structured so that the optical confinement factor becomes smaller on the forward side than on the backward side.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.