Method of fabricating a thin film transistor
US7566404B2 · kind B2 · utility
4Cited by
3References
7Claims
0Family size
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Key dates
| Filing date | Feb 2, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Feb 2, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etchant for patterning composite layer containing copper is provided. The etchant includes peracetic acid being about 5% to 40% by weight and serving as a major component, a peracetic acid stabilizer being about 5% to 15% by weight, an organic acid being about 5% to 10% by weight, an inorganic acid being about 5% to 15% by weight, a salt being about 8% to 15% by weight, which are based on the total weight of the etchant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.