Substrate dividing method
US7566635B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 17, 2006 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Mar 23, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.