Patent · US Active

Semiconductor devices including nanotubes

US7566945B2 · kind B2 · utility

15Cited by
1References
27Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 4, 2006
Grant dateJul 28, 2009
Priority date
Expiry dateJul 28, 2027

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S977/94
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

Nano semiconductor switch devices are provided that include a semiconductor substrate and a conductive layer on the semiconductor substrate. A first insulating layer is provided on the conductive layer and the semiconductor substrate. The first insulating layer defines a contact hole that exposes at least a portion of the conductive layer. Carbon nano tubes are provided on the exposed portion of the conductive layer in the contact hole. The carbon nano tubes are in a vertical direction with respect to the semiconductor substrate. Related methods of fabrication are also provided herein.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.