Semiconductor laser having low stress passivation layer
US7567601B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 15, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | May 15, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode having a composite passivation layer configured to control parasitic capacitance, especially in high speed laser applications, is disclosed. In one embodiment, a ridge waveguide laser is disclosed and includes: a substrate, an active layer disposed on the substrate, a ridge structure disposed on the active layer, and a contact layer disposed on the ridge structure. A composite passivation layer is disposed substantially laterally to the ridge structure. The composite passivation layer includes a silicon nitride bottom layer, a silicon nitride top layer, and a silicon dioxide middle layer interposed between the bottom and top layers. The passivation layers possess differing stress components that, when combined, cancel out the overall mechanical stress of the passivation layer. This enables relatively thick passivation layers to be employed in high speed laser diodes without increasing the risk of layer stress cracking and laser damage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.