Semiconductor laser diode with advanced window structure
US7567603B2 · kind B2 · utility
1Cited by
4References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2007 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Sep 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/168
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The invention relates to a semiconductor laser diode structure with increased catastrophic optical damage (COD) power limit, featuring three sections, sometimes called windows, at the output facet of the diode. These include an optically transparent section, a current blocking section and a partially current blocking section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.