Strong distributed feedback semiconductor laser
US7567606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2008 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | May 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1228
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a strong distributed feedback semiconductor laser. More specifically, the invention implements a top optical waveguide (2) for semiconductor lasers having a surface metallic grating (5) making it possible to obtain a stable and controlled distributed feedback, using a simple and robust technology. In the inventive laser, which comprises an active area (1) having an effective refractive index (neff) in which a light wave is propagated with a wavelength (λ), the top waveguide (2) is made of a weakly-doped material and the periodic grating (5) depth (p) isplus or minus 50%, the low precision needed being one of the advantages of the inventive laser.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.