Hot-carrier device degradation modeling and extraction methodologies
US7567891B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2001 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Nov 3, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2119/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention is directed to a number of improvements in methods for hot-carrier device degradation modeling and extraction. Several improvements are presented for the improvement of building device degradation models, including allowing the user to select a device parameter used to build the device degradation model independent of the device parameter selected. The user can also select the functional relation between stress time and degradation level. To further improve accuracy, multiple acceleration parameters can be used to account for different regions of the degradation process. Analytical functions may be used to represent aged device model parameters, either directly or by fitting measured device parameters versus device age values, allowing devices with different age values to share the same device model. The concept of binning is extended to include device degradation. In addition to a binning based on device width and length, age is added. In an exemplary embodiment, only devices with minimum channel length have degraded models constructed. The present invention also allows the degradation of one device parameter to be determined based on an age value derived fro…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.