Method for checking printability of a lithography target
US7568174B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2006 |
| Grant date | Jul 28, 2009 |
| Priority date | — |
| Expiry date | Mar 15, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/705
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.