Patent · US Active

Sub-resolution assist features for photolithography with trim ends

US7569310B2 · kind B2 · utility

168Cited by

1References

18Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Charles H. Wallace · Portland, US
Chiou-hung Jang · Hillsboro, US

Key dates

Filing date	Dec 7, 2005
Grant date	Aug 4, 2009
Priority date	—
Expiry date	Jul 31, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Sub-resolution assist features with trim ends are described for use in photolithography. A photolithography mask with elongated features is synthesized. A sub-resolution assist feature is applied to an end-to-end gap between the elongated features. Trim is applied to the ends of the sub-resolution assist feature, the trim connecting the sub-resolution assist feature to an end of a main feature, the trim having a narrower width than the remaining portion of the sub-resolution assist feature and the synthesized photolithography mask is modified to include the sub-resolution assist feature and trim.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.