Composition for removing photoresist and method of forming a pattern using the same
US7569336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Sep 21, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/425
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.