Flip-chip packaging method for light emitting diode with eutectic layer not overlapping insulating layer
US7569420B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 7, 2008 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | May 7, 2028 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T225/343
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A packaging structure and method for a light emitting diode is provided. The present invention uses flip-chip and eutectic bonding technology to attach a LED to a thermal and electrical conducting substrate. The flip-chip packaging structure comprises a thermal and electrical conducting substrate having an insulating layer formed in an appropriate area on the top surface of the substrate and a bonding pad formed on top of the insulating layer; and a LED reversed in a flip-chip style and joined to the substrate by eutectic bonding. A first electrode of the LED is eutectically bonded to an appropriate area on the top surface of the substrate via a eutectic layer, while a second electrode of the LED is electrically connected to the bonding pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.