Non-thermally annealed doped semiconductor material and methods related thereto
US7569458B2 · kind B2 · utility
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10References
17Claims
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Key dates
| Filing date | Feb 12, 2007 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Nov 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10-25 μm and more particularly 15-18 μm, or a frequency ranging from 12-30 THz and more particularly 16.5-20 THz.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.