Manufacturing method of semiconductor device
US7569498B2 · kind B2 · utility
2Cited by
2References
20Claims
0Family size
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Key dates
| Filing date | Jan 25, 2008 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Feb 9, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device, includes forming a porous organo-siloxane film containing a porogen component having carbon as a main component above a semiconductor substrate, forming an upper-side insulating film having at least one of film density and film composition different from that of the porous organo-siloxane film on the porous organo-siloxane film, and applying at least one of an electron beam and an ultraviolet ray to the porous organo-siloxane film and upper-side insulating film to cause polymerization reaction of the porogen component in the porous organo-siloxane film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.