Semiconductor device with NMOS transistors arranged continuously

US7569894B2 · kind B2 · utility

Assignee

• NEC Electronics Corporation · JP

Inventor

• Fumiaki Suzuki · Osaka, JP

Key dates

• Filing date: May 16, 2006
• Grant date: Aug 4, 2009
• Expiry date: Oct 21, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D89/10

Abstract

A semiconductor device includes a plurality of PMOS transistors formed on a semiconductor substrate; and a plurality of NMOS transistors formed on the semiconductor substrate. The plurality of PMOS transistors are electrically isolated from each other by a device isolation structure formed in the semiconductor substrate. The plurality of NMOS transistors are continuously formed in a first direction such that a sequence of N-type diffusion layers of the plurality of NMOS transistors extends in the first direction. One of the plurality of PMOS transistors and one of the plurality of NMOS transistors share a gate electrode.