White-light fluorescent lamp having luminescence layer with silicon quantum dots
US7569984B2 · kind B2 · utility
4Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05B41/14
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A structure is formed by putting glass plates between a luminescence generating device and an electron emitting device so that a vacuum is formed in between. After in putting a high-voltage, an electron beam is emitted from the electron emitting device using low power. In the end, silicon quantum dots in the luminescence generating device are excited to generate a white light. The present invention has a good optoelectronic transformation efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.