Gate driver circuit for switching device
US7570085B2 · kind B2 · utility
21Cited by
21References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 19, 2007 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Jan 19, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/168
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A gate driver circuit of a voltage drive type power semiconductor switching device capable of speeding up di/dt and dv/dt even during large-current driving to thereby reduce the switching loss is disclosed. This power semiconductor switching device gate driving circuit includes a drive circuit which applies a drive signal to the gate electrode of the power semiconductor switching device and a measurement unit for measuring a flow current of the power semiconductor switching device. Based on a detected value of the flow current of the power semiconductor switching device, the gate is made variable in mirror voltage thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.