Optical limiter having trimetallic nitride endohedral metallofullerence films
US7570411B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2005 |
| Grant date | Aug 4, 2009 |
| Priority date | — |
| Expiry date | Jul 10, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/38
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An exemplary optical limiter device (100) has an optically transmissive substrate (102) and a layer (104) on a first surface (106) of the substrate, the layer having a trimetallic nitride endohedral metallofullerene. The layer can be a thin film of the trimetallic nitride endohedral metallofullerene, a layer material with a cavity containing a solution with the trimetallic nitride endohedral metallofullerene, a sol-gel with a trimetallic nitride endohedral metallofullerene, and a self assembled monolayer with a trimetallic nitride endohedral metallofullerene. The layers of trimetallic nitride endohedral metallofullerenes can be vapor deposited, solution deposited and/or self assembled onto optical components. The third-order nonlinear properties of these films provide desired transmission characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.