Patent · US Active

Non-collinear end-to-end structures with sub-resolution assist features

US7572557B2 · kind B2 · utility

5Cited by

0References

15Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Charles H. Wallace · Portland, US
Shannon Daviess · Hillsboro, US
Swaminathan Sivakumar · Portland, US

Key dates

Filing date	Dec 7, 2005
Grant date	Aug 11, 2009
Priority date	—
Expiry date	Jul 24, 2027

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/36
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Sub-resolution assist features for non-collinear features are described for use in photolithography. A photolithography mask with elongated features is synthesized. An end-to-end gap between two features if found for which the ends of the two features facing the gap are linearly offset from one another. A sub-resolution assist feature is applied to the end-to-end gap between the elongated features, and the synthesized photolithography mask is modified to include the sub-resolution assist feature.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.