Patent · US Active

Semiconductor dynamic sensor and method of manufacturing the same

US7572659B2 · kind B2 · utility

5Cited by
7References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 12, 2006
Grant dateAug 11, 2009
Priority date
Expiry dateApr 11, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2224/73265
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A semiconductor sensor includes an adhesive film for suppressing thermal stress transfer to a semiconductor sensor chip. More specifically, the adhesive film includes a first layer and a second layer. An elasticity modulus of the first layer is lower than that of the second layer, and the second layer has a water absorption smaller than that of the first layer. One surface of a semiconductor wafer is in contact with the first layer. Once the semiconductor wafer and the adhesive film are diced into a plurality of sensor chips, the sensor chip with the adhesive film is mounted on a sensor package via the second layer interposed therebetween.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.