Microelectronics grade metal substrate, related metal-embedded devices and methods for fabricating same
US7572665B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2005 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Oct 31, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C28/345
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Fabricating a microelectronics grade metal substrate comprises forming the metal substrate on a sacrificial substrate. An adhesion layer can be deposited on or over the surface of the sacrificial substrate. A seed layer of the metal can be deposited on or over the adhesion layer. The metal material can be deposited on the seed layer by electroplating or other low-temperature, low-stress process to form a microelectronics-grade metal substrate. Thin film sensors and/or other microelectronic devices, followed by appropriate insulating layer(s), may be fabricated on or over the sacrificial substrate before forming the metal substrate. The sacrificial silicon substrate can then be etched away, leaving the microelectronics-grade metal substrate, and possibly the microelectronics device. Another insulating layer(s), followed by another adhesion layer, another seed layer and additional amounts of the material forming the metal substrate can then be deposited over the now-exposed microelectronics device to encapsulate it within a metal shell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.