Method of forming an organic semiconductor pattern and method of manufacturing an organic thin film transistor using the same
US7572667B2 · kind B2 · utility
16Cited by
3References
24Claims
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Key dates
| Filing date | Jan 20, 2006 |
| Grant date | Aug 11, 2009 |
| Priority date | — |
| Expiry date | Apr 26, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T156/137
Abstract
A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.